After announced the first 14 nanometer processor for wearable devices, Samsung has now established another record with the start of mass production of the first SoC made with FinFET technology 10 nanometers . The Korean manufacturer has therefore anticipated other chipmakers, including Intel and TSMC.
In January 2015, Samsung had already achieved that feat with the first 14-nanometer mobile processor (Exynos 7420 of the famous Galaxy S6 / If edge). With first 10-nanometer chip the Korean company has confirmed its leadership in the semiconductor industry. Intel however has encountered some difficulties that have advised the US manufacturer to develop a third architecture in 14 nanometer ( Kaby Lake ). The two solutions are however not comparable, since Intel processors are more complex.
The new production process of Samsung, called 10LPE, involves the use of 3D transistors with various improvements over the previous technology to 14 nanometers. Through the use of advanced techniques, such as triple-patterning lithography, SoCs at 10 nanometer offer superior performance of 27% and 40% lower fuel consumption. With the second generation of the process (10LPP), whose mass production will begin in the second half of 2017, is expected to further increase the performance.
Exynos 8895 and Snapdragon 830 should be the first 10-nanometer chip that hit the market in early 2017. Almost certainly the two will be integrated into the SoC Galaxy S8 that Samsung will announce at Mobile World Congress in Barcelona.